Features: ` Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating ±30 V` Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche capability ratingsSpecificationsDrain to Source Voltage(V GS = 0 V) VDSS600 VGate to Source Voltage (VDS = 0 ...
2SK3115_1377661: Features: ` Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating ±30 V` Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche capabilit...
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The 2SK3115_1377661 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, nd designed for high voltage applications such as switching power supply, AC adapter.