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2SK3114

Features: • Low on-state resistance: RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A)• Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)•Gate voltage rating: ±30 V• Avalanche capability ratings• Isolated TO-220 packageSpecificationsDrain to Source Vol...

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SeekIC No. : 004226552 Detail

2SK3114: Features: • Low on-state resistance: RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A)• Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)•Gate voltage rating: ±30 V...

2SK3114 Data Sheet

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Part Number:
2SK3114
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance:
   RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A)
• Low gate charge:
   QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
•Gate voltage rating: ±30 V
• Avalanche capability ratings
• Isolated TO-220 package


Specifications

Drain to Source Voltage (VGS = 0 V)           VDSS           600          V
Gate to Source Voltage (VDS = 0 V)            VGSS          ±30           V
Drain Current (DC) (TC = 25°C)                   ID(DC)       ±4.0         A
Drain Current (pulse) Note1                         ID(pulse)     ±16          A
Total Power Dissipation (TC = 25°C)           PT1             30           W
Total Power Dissipation (TA = 25°C)           PT2              2.0          W
Channel Temperature                                 Tch               150        °C
Storage Temperature                                  Tstg    55 to +150    °C
Single Avalanche Current Note2                   IAS                 4.0         A
Single Avalanche Energy Note2                    EAS               10.7        mJ

Notes 1. PW 10 s, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V


Description

The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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