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2SK3112

Features: • Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A)• Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)• Avalanche capability rated• Built-in gate protection diode• Surface mount device avail...

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SeekIC No. : 004226550 Detail

2SK3112: Features: • Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A)• Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)•...

2SK3112 Data Sheet

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Part Number:
2SK3112
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A)
• Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available




Specifications

Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current(DC) (TC = 25)
ID(DC)
±14
A
Drain Current(pulse) Note1
ID(pulse)
±42
A
Total Power Dissipation (TA = 25)
PT1
2.0
W
Total Power Dissipation (TC = 25)
PT2
35
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
55 to +150
Single Avalanche Current Note2
IAS
14
A
Single Avalanche Energy Note2
EAS
98
mJ

Notes
1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25, VDD = 100 V, RG = 25 , VGS = 20 V0 V




Description

The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.




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