2SK3110 Selling Leads, Price trend, 2SK3110 DataSheet download, circuit diagram from SeekIC.com

Features: · Gate voltage rating ±30 V· Low on-state resistance RDS(on) = 180 mW MAX. (VGS = 10 V, ID = 7.0 A)· Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)· Built-in gate protection diode· Avalanche capability rated· Isolated TO-220 packageSpecifications Drain to Source...

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SeekIC No. : 004226548 Detail

2SK3110: Features: · Gate voltage rating ±30 V· Low on-state resistance RDS(on) = 180 mW MAX. (VGS = 10 V, ID = 7.0 A)· Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)· Built-in gate protec...

2SK3110 Data Sheet

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Part Number:: 2SK3110
Supply Ability:: 5000

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1~5000

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Upload time: 2024/6/9

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Product Details

Description

Features:

· Gate voltage rating ±30 V
· Low on-state resistance R_DS(on) = 180 mW MAX. (V_GS = 10 V, I_D = 7.0 A)
· Low input capacitance C_iss = 1000 pF TYP. (V_DS = 10 V, V_GS = 0 V)
· Built-in gate protection diode
· Avalanche capability rated
· Isolated TO-220 package

Specifications

Drain to Source Voltage (V_GS = 0 V)	V_DSS	200	V
Gate to Source Voltage (V_DS = 0 V)	V_GSS	±30	V
Drain Current(DC) (T_C = 25)	I_D(DC)	±14	A
Drain Current(pulse) Note1	I_D(pulse)	±42	A
Total Power Dissipation (T_A = 25)	P_T1	2.0	W
Total Power Dissipation (T_C = 25)	P_T2	35	W
Channel Temperature	T_ch	150
Storage Temperature	T_stg	55 to +150
Single Avalanche Current ^Note2	I_AS	14	A
Single Avalanche Energy ^Note2	E_AS	98	mJ

Note
1. PW 10 ms, Duty Cycle 1 %
2. Starting T_ch = 25, V_DD = 100 V, R_G = 25 W , VG_S= 20 V®0 V

Description

The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.

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2SK3110

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