2SK3108 Selling Leads, Price trend, 2SK3108 DataSheet download, circuit diagram from SeekIC.com

Features: ·Gate voltage rating ±30 V·Low on-state resistance R DS(on) = 0.4 W MAX. (VGS = 10 V, ID = 4.0 A)·Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)·Avalanche capability rated·Built-in gate protection diode·Isolated TO-220 packageSpecifications Drain to Source Voltage ...

See larger image

SeekIC No. : 004226546 Detail

2SK3108: Features: ·Gate voltage rating ±30 V·Low on-state resistance R DS(on) = 0.4 W MAX. (VGS = 10 V, ID = 4.0 A)·Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)·Avalanche capability rate...

2SK3108 Data Sheet

Get Latest Price

Part Number:: 2SK3108
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

2SK3001 evaluate
Features: · Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)· High ass...
2SK3009 evaluate
Features: SpecificationsDescription The 2SK3009 has four features. The first feature of the 2SK300...
2SK3012 evaluate
Features: SpecificationsDescription The 2SK3012 has four features. The first feature of the 2SK301...

Product Details

Description

Features:

·Gate voltage rating ±30 V
·Low on-state resistance R _DS(on) = 0.4 W MAX. (V_GS = 10 V, ID = 4.0 A)
·Low input capacitance C_iss = 400 pF TYP. (V_DS = 10 V, VGS = 0 V)
·Avalanche capability rated
·Built-in gate protection diode
·Isolated TO-220 package

Specifications

Drain to Source Voltage (V_GS = 0 V)	V_DSS	200	V
Gate to Source Voltage (V_DS = 0 V)	V_GSS	±30	V
Drain Current(DC) (T_C = 25°C)	I _D(DC)	±8.0	A
Drain Current(pulse) Note1	I _D(pulse)	±24	A
Total Power Dissipation (TA = 25°C)	P_T1	2.0	W
Total Power Dissipation (TC = 25°C)	P_T2	25	W
Channel Temperature	Tch	150
Storage Temperature	T_stg	-55 to +150
Single Avalanche Current Note2	I_AS	8.0	A
Single Avalanche Energy Note2	E_AS	51	mJ

Note1. PW 10 ms, Duty Cycle 1%
2. Starting T_ch = 25°C, V_DD = 100 V, R_G = 25 W , V_GS = 20 V®0 V

Description

The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

Customers Who Bought This Item Also Bought

2SK3000
US $$0.10 - 0.20 / Piece

Supply Ability:3000Day

View details
2SK3018FPDT106
US $$0.02 - 0.05 / Piece

Supply Ability:10000Week

View details
2SK3018T106 ROHM SOT-323
US $$0.02 - 0.08 / Piece

Supply Ability:1Day

View details
2SK3019
US $$0.02 - 0.02 / Piece

Supply Ability:10000Week

View details
2SK3019
US $$0.10 - 100.00 / Piece

Supply Ability:10000Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

2SK3108

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Semiconductor Modules(17785)

Capacitors(4587)

Industrial Controls, Meters(3690)

Prototyping Products(332)

Power Supplies - Board Mount(3035)

Test Equipment(3237)