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2SK3108

Features: ·Gate voltage rating ±30 V·Low on-state resistance R DS(on) = 0.4 W MAX. (VGS = 10 V, ID = 4.0 A)·Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)·Avalanche capability rated·Built-in gate protection diode·Isolated TO-220 packageSpecifications Drain to Source Voltage ...

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SeekIC No. : 004226546 Detail

2SK3108: Features: ·Gate voltage rating ±30 V·Low on-state resistance R DS(on) = 0.4 W MAX. (VGS = 10 V, ID = 4.0 A)·Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)·Avalanche capability rate...

2SK3108 Data Sheet

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Part Number:
2SK3108
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Gate voltage rating ±30 V
·Low on-state resistance R DS(on) = 0.4 W MAX. (VGS = 10 V, ID = 4.0 A)
·Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
·Avalanche capability rated
·Built-in gate protection diode
·Isolated TO-220 package


Specifications

Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current(DC) (TC = 25°C)
I D(DC)
±8.0
A
Drain Current(pulse) Note1
I D(pulse)
±24
A
Total Power Dissipation (TA = 25°C)
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
25
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
Single Avalanche Current Note2
IAS
8.0
A
Single Avalanche Energy Note2
EAS
51
mJ
Note1. PW 10 ms, Duty Cycle 1%
       2. Starting Tch = 25°C, VDD = 100 V, RG = 25 W , VGS = 20 V®0 V


Description

The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.


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