2SK3084

DescriptionThe 2SK3084 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and chopper regulator, DC to DC converter as well as motor drive applications.Features of 2SK3084 are:(1)low drain-source ON resistance: RDS(ON) is 40 ohms t...

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SeekIC No. : 004226535 Detail

2SK3084: DescriptionThe 2SK3084 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and chopper regulator, DC to DC converter as well as moto...

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Part Number:
2SK3084
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The 2SK3084 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and chopper regulator, DC to DC converter as well as motor drive applications.Features of 2SK3084 are:(1)low drain-source ON resistance: RDS(ON) is 40 ohms typ; (2)high forward transfer admittance: Yfs is 27 S typ; (3)low leakage current: IDSS is 100 uA max(VDS is 100 V); (4)enhancement-mode: Vth is 0.8 V to 2.0 V(VDS is 10 V and ID is 1 mA).

The absolute maximum ratings of 2SK3084 can be summerized as:(1): drain-source voltage, VDSS is 100 V; (2): drain-gate voltage(RGS is 20 kohms), VDGR is 100 V; (3): gate-source voltage, VGSS is ±20 V; (4): DC drain current, ID is 30 A; (5): drain power dissipation(ta is 25), PD is 65 W; (6): single pulse avalanche ennergy, EAS is 293 mJ; (7): avalanche current, IAR is 30 A; (8): repetitive avalanche energy, EAR is 6.5 mJ; (9): channel temperature, Tch is 150; (10): storage temeprature range, tstg is -55 to 150.

The electrical characteristics of 2SK3084 can be summerized as:(1): gate leakage current, IGSS is ±20 A max when VGS is ±16 V and VDS is 0 V; (2): drain-source breakdown voltage, V(BR)DSS is 100 V min when IG is 10 mA and VGS is 0 V; (3): drain cut-off current, IDSS is 100 uA max when VDS is 100 A and VGS is 0 V; (4): output capacitance, Coss is 520 pF typ when VDS is 10 V , VGS is 0 V and f is 1 MHz; (5): gate threshold voltage, Vth is 0.8 V min and 2.0 V max when VDS is 10 V and ID is 1 mA; (6): drain-source ON resistance, RDS(ON) is 46 ohm typ and 70 ohm max when VGS is 4 V and ID is 15 A; (7): input capacitance, Ciss is 3250 pF typ when VDS is 10 V , VGS is 0 V and f is 1 MHz.




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