2SK3082L

The 2SK3082L is designed as silicon N channel MOSFET for high speed power switching.

2SK3082L has three features. (1)Low on-resistance which means Rds=0.055 typ. (2)High speed switching. (3)4V gate drive device can be driven from 5V source. Those are all the main features.

Some absolute maximum ratings of 2SK3082L have been concluded into several points as follow. (1)Its drain to source voltage would be 60V. (2)Its gate to source voltage would be +/-20V. (3)Its drain current would be 10A. (4)Its drain peak current would be 40A. (5)Its body-drain diode reverse drain current would be 10A. (6)Its avalanche current would be 10A. (7)Its avalanche energy would be 8.5mJ. (8)Its channel dissipation would be 30W. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to +150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK3082L are concluded as follow. (1)Its drain to source breakdown voltage would be min 60V. (2)Its gate to source breakdown voltage would be min +/-20V. (3)Its gate to source leak current would be max +/-10uA. (4)Its zero gate voltage drain current would be max 10uA. (5)Its static drain to source on state resistance would be typ 0.055 and max 0.075. (6)Its gate to source cutoff voltage would be min 1.5V and max 2.5V. (7)Its forward transfer admittance would be min 5S and typ 8S. (8)Its input capacitance would be typ 350pF. (9)Its output capacitance would be 190pF. (10)Its reverse transfer capacitance would be typ 70pF. (11)Its turn-on time would be typ 10ns. (12)Its rise time would be typ 55ns. (13)Its turn-off delay time would be typ 60ns. (14)Its fall time would be typ 70ns. (15)Its body-drain diode forward voltage would be typ 0.9V. (16)Its body-drain diode reverse recovery time would be typ 50ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!