Features: ` Low on-resistance RDS(on) = 20 m typ. (VGS = 10V, ID = 15 A)` 4V gate drive devices.` High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 30 A ...
2SK3080: Features: ` Low on-resistance RDS(on) = 20 m typ. (VGS = 10V, ID = 15 A)` 4V gate drive devices.` High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage...
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` Low on-resistance
RDS(on) = 20 m typ. (VGS = 10V, ID = 15 A)
` 4V gate drive devices.
` High speed switching
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
30 |
A |
Drain peak current |
ID(pulse)Note1 |
120 |
A |
Body-drain diode reverse drain current |
IDR |
30 |
A |
Channel dissipation |
Pch Note2 |
50 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |
Note: 1. PW 10ms, duty cycle 1 %
2. Value at Tc = 25°C