2SK3077

The 2SK3077 is a kind of field effect transistor. It is silicon N channel MOS type for 900 MHz amplifier applications (GSM). It has three features. (1)output power: PO=15.0 dBm W min. (2)gain: GP=15.0 dB min. (3)drain efficiency: D=20% typ.

Some absolute maximum ratings of 2SK3077 have been concluded into several points as follows: (1)drain to source voltage, VDSS: 30 V; (2)Its gate to source voltage, VGSS: 5 V; (3)drain current, ID: 0.1 A; (4)power dissipation, PD: 0.1 W; (5)channel temperature, Tch: 150; (6)storage temperature range, Tstg: -45 to 150.

Also some electrical characteristics of 2SK3077 are concluded as follows: (1)output power, PO: 15.0 dBmW min when VDS=4.8 V, Iidle=43 mA (VGS=adjust), f=915 MHz, Pi=0 dBmW, ZG=ZL=50; (2)drain efficiency, D: 50% typ when Vds=4.8 V, Iidle=43 mA (VGS=adjust), f=915 MHz, Pi=0 dBmW, ZG=ZL=50; (3)power gain, GP: 15.0 dB when Vds=4.8 V, Iidle=43 mA (VGS=adjust), f=915 MHz, Pi=0 dBmW, ZG=ZL=50; (4)gate threshold voltage, Vth: 0.25 V min and 1.25 V max when  VDS=4.8 V, Id=0.5 mA; (5)drain cutoff current, IDSS: 10A max at VDS=10 V, VGS=0 V; (6)gate to source leakage current, IGSS: 5A max when VGS=5 V, VDS=0 V.