Features: ` Low on-resistance RDS(on) = 4.5 m typ.` Low drive current` 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS ±20 V Drain current ID 75 A Drain peak curren...
2SK3070(S): Features: ` Low on-resistance RDS(on) = 4.5 m typ.` Low drive current` 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage ...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 40 | V |
Gate to source voltage | VGSS | ±20 |
V |
Drain current | ID | 75 | A |
Drain peak current | ID(pulse)Note1 | 300 | A |
Body-drain diode reverse drain current | IDR | 75 | A |
Avalanche current | IAPNote 3 |
50 | A |
Avalanche energy | EARNote 3 |
333 | mJ |
Channel dissipation | PchNote2 | 100 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |