2SK3068

The 2SK3068 is designed as one kind of silicon N-channel MOSFET that can be used in high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. Features of the 2SK3068 are:(1)low drain-source ON resistance: RDS(ON)=0.4 (typ.);(2)high forward transfer admittance: 9.0 s (typ.);(3)low leakage current: IDSS=100 A(max.) (VDS=500 V);(4)enhancement-mode: Vth=2.0 to 4.0 V.

The absolute maximum ratings of the 2SK3068 can be summarized as:(1)drain-source voltage: 500 V;(2)drain-gate voltage (RGS=20 k): 500 V;(3)gate-source voltage: +/-30 V;(4)drain current DC: 12 A;(5)drain current pulse: 48 A;(6)drain power dissipation: 100 W;(7)single pulse avalanche energy: 364 mJ;(8)avalanche current: 12 A;(9)repetitive avalanche energy: 10 mJ;(10)channel temperatre: 150;(11)storage temperature range: -55 to +150. If you want to know more information such as the electrical characteristics about the 2SK3068, please download the datasheet in www.seekic.com or www.chinaicmart.com.