Application`Low drain−source ON resistance : RDS (ON) = 4.2 (typ.)`High forward transfer admittance : |Yfs| = 1.7 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol ...
2SK3067: Application`Low drain−source ON resistance : RDS (ON) = 4.2 (typ.)`High forward transfer admittance : |Yfs| = 1.7 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain−source voltage |
VDSS |
600 |
V | |
Drain−gate voltage (RGS = 20 k) |
VDGR |
600 |
V | |
Gate−source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note 1) |
ID |
2 |
A |
Pulse (t = 1 ms) (Note 1) |
IDP |
5 |
A | |
Pulse (t = 100 s) (Note 1) |
IDP |
8 |
A | |
Drain power dissipation |
PD |
25 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
93 |
mJ | |
Avalanche current |
IAR |
2 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
2.5 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.