2SK3065 T100

The 2SK3065 T100 is designed as one kind of small switching (60V, 2A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on resistance; (2)High-speed switching; (3)Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation); (4)Driving circuit is easy; (5)Easy to use parallel; (6)It is strong to an electrostatic discharge.

The absolute maximum ratings of the 2SK3065 T100 can be summarized as:(1)Drain-source voltage: 60 V;(2)Gate-source voltage: ±20 V;(3)Drain current: 2 or 8 A;(4)Reverse drain current: 2 or 8 A;(5)Reverse drain current: 0.5 or 2 W;(6)Channel temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SK3065 T100 can be summarized as:(1)Gate-source leakage: ±10 uA;(2)Drain-source breakdown voltage: 60 V;(3)Zero gate voltage drain current: 10 uA;(4)Gate threshold voltage: 0.8 to 1.5 V;(5)Forward transfer admittance: 1.5 S;(6)Input capacitance: 160 pF;(7)Output capacitance: 85 pF;(8)Reverse transfer capacitance: 25 pF;(9)Turn-on delay time: 20 ns;(10)Rise time: 50 ns. If you want to know more information about the 2SK3065 T100, please download the datasheet in www.seekic.com or www.chinaicmart.com .