2SK3062-ZJ

The 2SK3062-ZJ is designed as one kind of N-channel MOS field effect transistor that can be used in high voltage switching applications. Features of this device are:(1)low on-resistance:RDS (on)=8.5 m (VGS=10 V, ID=35 A);(2)low ciss ciss = 5200 pF typ.;(3)high avalanche capability ratings;(4)built-in G-S gate protection diodes.

The absolute maximum ratings of the 2SK3062-ZJ can be summarized as:(1)drain to source voltage: 60 V;(2)gate to source voltage:+20 or -10 V;(3)drain current (DC):±70 A;(4)drain current (pulse):±280 A;(5)total power dissipation (Tc=25 °C): 100 W;(6)channel tempera-ture:150 °C;(7)storage temperatu-re:55 to +150 °C;(8)single avalanche current: 35 A;(9)singleavalanche energy: 122.5 mJ.

And the electrical characteristics (TA=25 °C) of the 2SK3062-ZJ can be summarized as:(1)drain to source on-resistance: 6.3 or 8.2 m;(2)gate to source cutoff voltage: 1.0 V to 2.0 V(3)forward transfer admittance: 87 S;(4)drain leakage current: 10 A;(5)gate to source leakage current: +/-10 A;(6)input capacitance: 5200 pF;(7)output capacitance: 1300 pF;(8)reverse transfer capacitance: 480 pF;(9)turn-on delay time: 75 ns;(10)rise time: 1150 ns. If you want to know more information such as the electrical characteristics about the 2SK3062-ZJ, please download the datasheet in www.seekic.com or www.chinaicmart.com.