2SK3059

      The 2SK3059 can be described as followings. The 2SK3060 is N-channel MOS field effect transistor designed for high current switching applications.
      The followings are the features of the 2SK3059. The 2SK3059 has four features. The first is low on-state resistance. In detail, RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 35 A), and RDS(on)2 = 20 m MAX. (VGS = 4.0 V, ID = 35 A). The second is low ciss, in detail, ciss = 2400 pF TYP. The third is built-in gate protection diode. The last is isolated TO-220 package. According to the above descriptions, you absolutely know that the 2SK3059 is useful.
      The 2SK3059 has many absolute maximum ratings. Here show you eight absolute maximum ratings of the 2SK3059. It can make you clear of the 2SK3059. The first absolute maximum rating is the gate to source voltage which is ±20 V, and its symbol is VGSS(AC). The second absolute maximum rating is drain current, which is ±200A, and its symbol is ID(pulse). The third absolute maximum rating is total power dissipation, which is 30W on the condition TC= 25°C, and its symbol is PT. The fourth absolute maximum rating is channel temperature, which is 150 °C, and its symbol is Tch. The fifth absolute maximum rating is storage temperature range, which range from −55 °C to 150 °C, and its symbol is Tstg. The sixth absolute maximum rating is drain to source voltage which is 60V, and the symbol is VDSS. The seventh absolute maximum rating is drain current, which is ±50A, and its symbol is ID(DC). The eighth absolute maximum rating is total power dissipation, which is 2.0W on the condition TA = 25°C, and its symbol is PT.
      The 2SK3059 also has many electrical characteristics on the condition of TA = 25°C. Here show you five electrical characteristics of the 2SK3059. It can make you clear of the 2SK3059. The first electrical characteristics is the gate source cut-off voltage which is 1.5V(typ.), and its symbol is VGS(off). The second electrical characteristics is drain leakage current, which is 10A , and its symbol is IDSS. The third electrical characteristics is body diode forward voltage, which is 1.0V, and its symbol is VF(S-D). The fourth electrical characteristics is input capacitance, which is 2400pF, and its symbol is CISS. The last electrical characteristics is gate to source leakage current which is ±10A, and the symbol is IGSS.