2SK3058 Selling Leads, Price trend, 2SK3058 DataSheet download, circuit diagram from SeekIC.com

Features: · Super Low On-State Resistance RDS(on)1 = 17 mW MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mW MAX. (VGS = 4.0 V, ID = 28 A)· Low Ciss : Ciss = 2100 pF (TYP.)· Built-in Gate Protection DiodeSpecifications Drain to Source Voltage (VGS = 0) VDSS 60 V Gate to Source Voltage (VDS ...

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SeekIC No. : 004226508 Detail

2SK3058: Features: · Super Low On-State Resistance RDS(on)1 = 17 mW MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mW MAX. (VGS = 4.0 V, ID = 28 A)· Low Ciss : Ciss = 2100 pF (TYP.)· Built-in Gate Protection Dio...

2SK3058 Data Sheet

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Part Number:: 2SK3058
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

· Super Low On-State Resistance
R_DS(on)1 = 17 mW MAX. (V_GS = 10 V, I_D= 28 A)
R_DS(on)2 = 27 mW MAX. (V_GS = 4.0 V, I_D = 28 A)
· Low C_iss : C_iss = 2100 pF (TYP.)
· Built-in Gate Protection Diode

Specifications

Drain to Source Voltage (V_GS = 0)	V_DSS	60	V
Gate to Source Voltage (V_DS = 0)	V_GSS(AC)	±20	V
Gate to Source Voltage (V_DS = 0)	V_GSS(DC)	+20, 10	V
Drain Current (DC)	I_D(DC)	±55	A
Drain Current (Pulse) ^Note1	I_D(pulse)	±165	A
Total Power Dissipation ((T_C = 25°C)	P_T	58	W
Total Power Dissipation (T_A = 25°C)	P_T	1.5	W
Channel Temperature	T_ch	150	°C
Storage Temperature	T_stg	55 to + 150	°C
Single Avalanche Current ^Note2	I_AS	27.5	A
Single Avalanche Energy ^Note2	E_AS	75.6	mJ

Notes 1. PW 10 ms, Duty cycle 1 %
2. Starting T_ch = 25 °C, R_G = 25 W, V_GS = 20 V 0

Description

2SK3058 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

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2SK3058

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