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2SK3058

Features: · Super Low On-State Resistance RDS(on)1 = 17 mW MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mW MAX. (VGS = 4.0 V, ID = 28 A)· Low Ciss : Ciss = 2100 pF (TYP.)· Built-in Gate Protection DiodeSpecifications Drain to Source Voltage (VGS = 0) VDSS 60 V Gate to Source Voltage (VDS ...

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2SK3058: Features: · Super Low On-State Resistance RDS(on)1 = 17 mW MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mW MAX. (VGS = 4.0 V, ID = 28 A)· Low Ciss : Ciss = 2100 pF (TYP.)· Built-in Gate Protection Dio...

2SK3058 Data Sheet

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Part Number:
2SK3058
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

· Super Low On-State Resistance
     RDS(on)1 = 17 mW MAX. (VGS = 10 V, ID = 28 A)
     RDS(on)2 = 27 mW MAX. (VGS = 4.0 V, ID = 28 A)
· Low Ciss : Ciss = 2100 pF (TYP.)
· Built-in Gate Protection Diode




Specifications

Drain to Source Voltage (VGS = 0) VDSS 60 V
Gate to Source Voltage (VDS = 0) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0) VGSS(DC) +20, 10 V
Drain Current (DC) ID(DC) ±55 A
Drain Current (Pulse) Note1 ID(pulse) ±165 A
Total Power Dissipation ((TC  = 25°C) PT 58 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to + 150 °C
Single Avalanche Current Note2 IAS 27.5 A
Single Avalanche Energy Note2 EAS 75.6 mJ

Notes 1. PW 10 ms, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 W, VGS = 20 V   0




Description

2SK3058 is N-Channel MOS Field Effect Transistor designed for high current switching applications.




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