2SK3058-S

The 2SK3058-S is designed as one kind of N-channel MOS field effect transistor that can be used in high voltage switching applications. Features of this device are:(1)low on-resistance:RDS (on)=17 m (VGS=10 V, ID=28 A);(2)low ciss ciss = 2100 pF typ.;(3)high avalanche capability ratings;(4)built-in G-S gate protection diodes.

The absolute maximum ratings of the 2SK3058-S can be summarized as:(1)drain to source voltage: 60 V;(2)gate to source voltage:+20 or -10 V;(3)drain current (DC):±55 A;(4)drain current (pulse):±165 A;(5)total power dissipation (Tc=25 °C): 58 W;(6)channel tempera-ture:150 °C;(7)storage temperat-ure:55 to +150 °C;(8)single avalanche current:27.5 A;(9)singleavalanche energy: 75.6 mJ.

And the electrical characteristics (TA=25 °C) of the 2SK3058-S can be summarized as:(1)drain to source on-resistance: 12 m;(2)gate to source cutoff voltage: 1.0 V to 2.0 V(3)forward transfer admittance: 42 S;(4)drain leakage current: 10 A;(5)gate to source leakage current: +/-10 A;(6)input capacitance: 2100 pF;(7)output capacitance: 550 pF;(8)reverse transfer capacitance: 220 pF;(9)turn-on delay time: 36 ns;(10)rise time: 410 ns. If you want to know more information such as the electrical characteristics about the 2SK3058-S, please download the datasheet in www.seekic.com or www.chinaicmart.com.