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2SK3056-S_1319532

Features: • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A)RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)• Low Ciss : Ciss = 920 pF TYP.• Built-in Gate Protection DiodeSpecificationsDrain to Source Voltage (VGS = 0 V)VDSS 60 VGate to Source Volta...

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2SK3056-S_1319532: Features: • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A)RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)• Low Ciss : Ciss = 920 pF TYP.• Built-in...

2SK3056-S_1319532 Data Sheet

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Part Number:
2SK3056-S_1319532
Supply Ability:
5000

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Product Details

Description



Features:

• Low On-State Resistance
   RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A)
   RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode


Specifications

Drain to Source Voltage (VGS = 0 V)                   VDSS            60             V
Gate to Source Voltage (VDS = 0 V)                    VGSS(AC)     ±20           V
Gate to Source Voltage (VDS = 0 V)                    VGSS(DC)     +20, −10    V
Drain Current (DC)                                             ID(DC)          ±32            A
Drain Current (Pulse) Note1                                ID(pulse)       ±100          A
Total Power Dissipation (TC = 25°C)                PT                34               W
Total Power Dissipation (TA = 25°C)                PT                1.5               W
Channel Temperature                                       Tch               150            °C
Storage Temperature                                       Tstg           55 to +150 °C
Single Avalanche Current Note2                        IAS               16                  A
Single Avalanche Energy Note2                         EAS              25.6               mJ
Notes 1. PW 10 µs, Duty cycle 1 %
           2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V


Description

2SK3056-S_1319532 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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