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2SK3055

Features: ` Low On-State Resistance- RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) - RDS(on)2 = 50 m MAX. (VGS = 4.0 V, ID = 15 A)` Low Ciss : Ciss = 920 pF TYP.` Built-in Gate Protection Diode` Isolated TO-220 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltag...

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SeekIC No. : 004226505 Detail

2SK3055: Features: ` Low On-State Resistance- RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) - RDS(on)2 = 50 m MAX. (VGS = 4.0 V, ID = 15 A)` Low Ciss : Ciss = 920 pF TYP.` Built-in Gate Protection Diode` Isol...

2SK3055 Data Sheet

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Part Number:
2SK3055
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low On-State Resistance
   - RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A)
   - RDS(on)2 = 50 m MAX. (VGS = 4.0 V, ID = 15 A)
` Low Ciss : Ciss = 920 pF TYP.
` Built-in Gate Protection Diode
` Isolated TO-220 package


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, -10 V
Drain Current (DC) ID(DC) ±30 A
Drain Current (Pulse) Note1 ID(pulse) ±100 A
Total Power Dissipation (TC = 25°C) PT 25 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 15 A
Single Avalanche Energy Note2 EAS 22.5 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

2SK3055 is N-Channel MOS Field Effect Transistor designed for high current switching applications.




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