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2SK3053

Features: ` Low On-State Resistance R DS(on)1 = 45 m MAX. (VGS = 10 V, ID = 13 A) R DS(on)2 = 70 m MAX. (VGS = 4.0 V, ID = 13 A)` Low Ciss : Ciss = 790 pF TYP.` Built-in Gate Protection Diode` Isolated TO-220 packageSpecificationsDrain to Source Voltage VDSS............................60 VGate to ...

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SeekIC No. : 004226503 Detail

2SK3053: Features: ` Low On-State Resistance R DS(on)1 = 45 m MAX. (VGS = 10 V, ID = 13 A) R DS(on)2 = 70 m MAX. (VGS = 4.0 V, ID = 13 A)` Low Ciss : Ciss = 790 pF TYP.` Built-in Gate Protection Diode` Isola...

2SK3053 Data Sheet

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Part Number:
2SK3053
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low On-State Resistance
   R DS(on)1 = 45 m MAX. (VGS = 10 V, ID = 13 A)
   R DS(on)2 = 70 m MAX. (VGS = 4.0 V, ID = 13 A)
` Low Ciss : Ciss = 790 pF TYP.
` Built-in Gate Protection Diode
` Isolated TO-220 package


Specifications

Drain to Source Voltage VDSS............................60 V
Gate to Source Voltage VGSS(AC) .........................±20 V
Gate to Source Voltage VGSS(DC).......................+20, -10 V
Drain Current (DC) I D(DC)  ............................±25 A
Drain Current (Pulse) Note1 I D(pulse)  ......................±75 A
Total Power Dissipation (TC = 25°C) PT    .....................30 W
Total Power Dissipation (TA = 25°C) PT ......................2.0 W
Channel Temperature Tch  ............................150 °C
Storage Temperature Tstg  .......................55 to +150 °C
Single Avalanche Current Note2 IAS ........................12.5 A
Single Avalanche Energy Note2 EAS  .......................15.6 mJ
Notes
* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0




Description

The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.


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