Features: Low on-resistance.Fast switching speed.Wide SOA (safe operating area).Gate-source voltage (VGSS) guaranteed to be ±30V.Easily designed drive circuits.Easy to use in parallel.Silicon N-channel MOSFETSpecifications Parameter Symbol Rating Unit Drain to Source VoltageGate...
2SK3050: Features: Low on-resistance.Fast switching speed.Wide SOA (safe operating area).Gate-source voltage (VGSS) guaranteed to be ±30V.Easily designed drive circuits.Easy to use in parallel.Silicon N-chan...
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Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current (pulse) * Body to drain diode reverse drain current Body to drain diode reverse drain current(pulse) Total power dissipation (Tc=25) Channel Temperature Storage temperature |
VDSS VGSS ID IDP IDR IDRP PD Tch Tstg |
600 ±30 2 6 2 6 20 150 -55 to +150 |
V V A A A A W |