2SK3047

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 2A
Mounting Type: Through Hole
Power - Max: 30W
Packaging: Bulk
Drain to Source Voltage (Vdss): 800V
Package / Case: TO-220-3 Full Pack
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220D-A1
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 350pF @ 20V


Features:

·Avalanche energy capacity guaranteed: EAS > 15mJ
·V_GSS = ±30V guaranteed
·High-speed switching: t_f = 25ns
·No secondary breakdown


Application

·Contactless relay
·Diving circuit for a solenoid
·Driving circuit for a motor
·Control equipment
·Switching power supply


Specifications

Parameter		Symbol	Ratings	Unit
Drain to Source breakdown voltage		VDSS	800	V
Gate to Source voltage		VGSS	±30	V
Drain current	DC	ID	±2	A
	Pulse	IDP	±4	A
Avalanche energy capacity		EAS*	15	mJ
Allowable power	TC = 25°C	PD	30	W
	Ta = 25°C		2
Channel temperature		Tch	150	°C
Storage temperature		Tstg	-55 to +150	°C

* L = 5mH, I_L = 2.45A, V_DD = 50V, 1 pulse