2SK3045

MOSFET N-CH 500V 2.5A TO-220D

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SeekIC No. : 003431477 Detail

2SK3045: MOSFET N-CH 500V 2.5A TO-220D

floor Price/Ceiling Price

US $ .44~.94 / Piece | Get Latest Price
Part Number:
2SK3045
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • Unit Price
  • $.94
  • $.75
  • $.68
  • $.6
  • $.53
  • $.44
  • $.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/9

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 330pF @ 20V
Power - Max: 30W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 500V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 2.5A
Power - Max: 30W
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Input Capacitance (Ciss) @ Vds: 330pF @ 20V
Supplier Device Package: TO-220D-A1


Features:

·Avalanche energy capacity guaranteed: EAS > 15.6mJ
·VGSS = ±30V guaranteed
·High-speed switching: tf = 35ns
·No secondary breakdown



Application

·Contactless relay
·Diving circuit for a solenoid
·Driving circuit for a motor
·Control equipment
·Switching power supply



Specifications

Parameter Symbol Ratings Unit
Drain to Source breakdown voltage VDSS 500 V
Gate to Source voltage VGSS ±30 V
Drain current DC ID ±2.5 A
Pulse IDP ±10 A
Avalanche energy capacity EAS* 15.6 mJ
Allowable power TC = 25°C PD 30 W
Ta = 25°C 2
Channel temperature Tch 150 °C
Storage temperature Tstg -55 to +150 °C
* L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse


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