2SK3019

Features: · Low on-resistance.· Fast switching speed.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.· Easy to parallel.Specifications Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-soure vlt...

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SeekIC No. : 004226480 Detail

2SK3019: Features: · Low on-resistance.· Fast switching speed.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.· Easy to parallel.Specifications ...

floor Price/Ceiling Price

Part Number:
2SK3019
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

· Low on-resistance.
· Fast switching speed.
· Low voltage drive (2.5V) makes this device ideal for portable equipment.
· Easily designed drive circuits.
· Easy to parallel.





Specifications

Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-soure vltage
VGSS
±20
V
Drain current Continuous
ID
100
mA
Pulsed
IDP(1)
200
Reverse drain current Continuous
IDR
100
mA
Pulsed
IDRP(1)
200
mA
Total power dissipation(Tc=25)
PD(2)
150
mA
Channel temperature
tch
150
°C
Storage temperature
Tstg
55 ~ + 150
°C

(1)RW10S,cycle50%
(2)With each pin mounted on the recommended lands




Description

The 2SK3019 is designed as one kind of small switching (30V, 0.1A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on-resistance; (2)Fast switching speed; (3)Low voltage drive (2.5V) makes this device ideal for portable equipment; (4)Easily designed drive circuits; (5)Easy to parallel. And this device can be used in interfacing, switching (30V, 100mA) applications.

The absolute maximum ratings of the 2SK3019 can be summarized as:(1)Drain-source voltage: 30 V;(2)Gate-source voltage: ±20 V;(3)Drain current: 0.1 or 0.4 A;(4)Total power dissipation: 150 mW; (5)Channel temperature: 150 ;(6)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Gate-source leakage: ±1 uA;(2)Drain-source breakdown voltage: 30 V;(3)Zero gate voltage drain current: 1.0 uA;(4)Gate threshold voltage: 0.8 to 1.5 V;(5)Forward transfer admittance: 20 mS;(6)Input capacitance: 13 pF;(7)Output capacitance: 9 pF;(8)Reverse transfer capacitance: 4 pF;(9)Turn-on delay time: 15 ns;(10)Rise time: 35 ns. If you want to know more information about the 2SK3019, please download the datasheet in www.seekic.com or www.chinaicmart.com .



`Interfacing, switching (30V, 100mA)




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