2SK3018

Features: · Low on-resistance.· Fast switching speed.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.· Easy to parallel.Application·Interfacing, switching (30V, 100mA)Specifications Parameter Symbol Limits Unit Drain-sourc...

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2SK3018 Picture
SeekIC No. : 004226478 Detail

2SK3018: Features: · Low on-resistance.· Fast switching speed.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.· Easy to parallel.Application·Interfa...

floor Price/Ceiling Price

Part Number:
2SK3018
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/9

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Product Details

Description



Features:

· Low on-resistance.
· Fast switching speed.
· Low voltage drive (2.5V) makes this device ideal for portable equipment.
· Easily designed drive circuits.
· Easy to parallel.





Application

·Interfacing, switching (30V, 100mA)




Specifications

Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-soure vltage
VGSS
±20
V
Drain current Continuous
ID
100
mA
Pulsed
IDP(1)
200
Reverse drain current Continuous
IDR
100
mA
Pulsed
IDRP(1)
200
mA
Total power dissipation(Tc=25)
PD(2)
200
mW
Channel temperature
tch
150
°C
Storage temperature
Tstg
55 ~ + 150
°C

(1)RW10S,cycle50%
(2)With each pin mounted on the recommended lands




Description

The 2SK3018 is a kind of transistor which belongs to N-channel silicon MOSFET.It can be used in interfacing and switching.It si available in taping package.

The following is features of 2SK3018. (1) low on-resistance; (2) fast switching speed; (3)low voltage drive (2.5 V) makes this device ideal for portable equipment; (4) easily designed drive circuits; (5) easy to parallel.

Then is absolute maximum ratings of 2SK3018 at TA is 25. (1): drain-cource voltage(VDSS) is 30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): drain current for the type of continuous(ID) is 100 mA and for the type of pulsed(IDP) is 200 mA; (4): reverse drain current for the type of continuous(IDR) is 100 mA and for the type of pulsed(IDRP) is 200 mA; (5): total power dissipation(PD) is 200 mW; (6): channel temperature(TCh) is 150; (7): storage tempterature(TSTG) is from -55 to 150; (8): the maximum of the gate-source leakage is ±1 A at the condition of VGS is ±20 V and VDS is 0 V; (9): the minimum of the drain-source breakdown voltage is 30 V at ID is 10 A and VGS is 0 V; (10): the minimum of the gate threshold voltage is 0.8 V, the maximum is 1.5 V when VDs is 3 V and ID is 100 A; (11): reverse transfer capacitance is 4 pF at f is 1 MHz; (12): both the rise time and the turn-off delay time are 80 ns when ID is 10 mA and VGS is 5 V.






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