Features: · Low on-resistance.· Fast switching speed.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.· Easy to parallel.Application·Interfacing, switching (30V, 100mA)Specifications Parameter Symbol Limits Unit Drain-sourc...
2SK3018: Features: · Low on-resistance.· Fast switching speed.· Low voltage drive (2.5V) makes this device ideal for portable equipment.· Easily designed drive circuits.· Easy to parallel.Application·Interfa...
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Parameter |
Symbol |
Limits |
Unit | |
Drain-source voltage |
VDSS |
30 |
V | |
Gate-soure vltage |
VGSS |
±20 |
V | |
Drain current | Continuous |
ID |
100 |
mA |
Pulsed |
IDP(1) |
200 | ||
Reverse drain current | Continuous |
IDR |
100 |
mA |
Pulsed |
IDRP(1) |
200 |
mA | |
Total power dissipation(Tc=25) |
PD(2) |
200 |
mW | |
Channel temperature |
tch |
150 |
°C | |
Storage temperature |
Tstg |
55 ~ + 150 |
°C |
The 2SK3018 is a kind of transistor which belongs to N-channel silicon MOSFET.It can be used in interfacing and switching.It si available in taping package.
The following is features of 2SK3018. (1) low on-resistance; (2) fast switching speed; (3)low voltage drive (2.5 V) makes this device ideal for portable equipment; (4) easily designed drive circuits; (5) easy to parallel.
Then is absolute maximum ratings of 2SK3018 at TA is 25. (1): drain-cource voltage(VDSS) is 30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): drain current for the type of continuous(ID) is 100 mA and for the type of pulsed(IDP) is 200 mA; (4): reverse drain current for the type of continuous(IDR) is 100 mA and for the type of pulsed(IDRP) is 200 mA; (5): total power dissipation(PD) is 200 mW; (6): channel temperature(TCh) is 150; (7): storage tempterature(TSTG) is from -55 to 150; (8): the maximum of the gate-source leakage is ±1 A at the condition of VGS is ±20 V and VDS is 0 V; (9): the minimum of the drain-source breakdown voltage is 30 V at ID is 10 A and VGS is 0 V; (10): the minimum of the gate threshold voltage is 0.8 V, the maximum is 1.5 V when VDs is 3 V and ID is 100 A; (11): reverse transfer capacitance is 4 pF at f is 1 MHz; (12): both the rise time and the turn-off delay time are 80 ns when ID is 10 mA and VGS is 5 V.