2SK3017(F)

MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

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SeekIC No. : 00150607 Detail

2SK3017(F): MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

floor Price/Ceiling Price

US $ 2.99~3.89 / Piece | Get Latest Price
Part Number:
2SK3017(F)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.89
  • $3.5
  • $3.09
  • $2.99
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 1.25 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-3P(N)IS
Packaging : Bulk    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 1.25 Ohms
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 8.5 A
Package / Case : TO-3P(N)IS


Parameters:

Technical/Catalog Information2SK3017(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs1.25 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / Case2-16F1B
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK3017 F
2SK3017F



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