2SK3017(F), US $ 2.99-3.89 , Toshiba, 2SK3017(F) DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00150607 Detail

2SK3017(F): MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

2SK3017(F) Data Sheet

US $ 2.99~3.89 / Piece | Get Latest Price

Part Number:: 2SK3017(F)
Mfg:: Toshiba
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$3.89
$3.5
$3.09
$2.99

Processing time
15 Days
15 Days
15 Days
15 Days

View more price & deliveries

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2025/12/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

2SK3001 evaluate
Features: · Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)· High ass...
2SK3009 evaluate
Features: SpecificationsDescription The 2SK3009 has four features. The first feature of the 2SK300...
2SK3012 evaluate
Features: SpecificationsDescription The 2SK3012 has four features. The first feature of the 2SK301...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	8.5 A
Resistance Drain-Source RDS (on) :	1.25 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3P(N)IS
Packaging :	Bulk

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 1.25 Ohms
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 8.5 A
Package / Case : TO-3P(N)IS

Parameters:

Technical/Catalog Information	2SK3017(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	8.5A
Rds On (Max) @ Id, Vgs	1.25 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2150pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	2-16F1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK3017 F 2SK3017F

Customers Who Bought This Item Also Bought

2SK3000
US $$0.10 - 0.20 / Piece

Supply Ability:3000Day

View details
2SK3018FPDT106
US $$0.02 - 0.05 / Piece

Supply Ability:10000Week

View details
2SK3018T106 ROHM SOT-323
US $$0.02 - 0.08 / Piece

Supply Ability:1Day

View details
2SK3019
US $$0.02 - 0.02 / Piece

Supply Ability:10000Week

View details
2SK3019
US $$0.10 - 100.00 / Piece

Supply Ability:10000Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

2SK3017(F)

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Tools(7611)

Cables, Wires - Management(4448)

Inductors, Coils, Chokes(1216)

Resistors(1299)

Optoelectronics(3638)

Audio Products(940)