2SK3017(F), US $ 2.99-3.89 , Toshiba, 2SK3017(F) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00150607 Detail

2SK3017(F): MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

2SK3017(F) Data Sheet

US $ 2.99~3.89 / Piece | Get Latest Price

Part Number:: 2SK3017(F)
Mfg:: Toshiba
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	8.5 A
Resistance Drain-Source RDS (on) :	1.25 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3P(N)IS
Packaging :	Bulk

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 1.25 Ohms
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 8.5 A
Package / Case : TO-3P(N)IS

Parameters:

Technical/Catalog Information	2SK3017(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	8.5A
Rds On (Max) @ Id, Vgs	1.25 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2150pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	2-16F1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK3017 F 2SK3017F

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2SK3017(F)

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