Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) @ Vds: 2150pF @ 25V
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25° C: 8.5A
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 90W
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)IS
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V
Features: SpecificationsDescription The 2SK3017 has a DC−DC converter, and it relay drive and motor drive. The followings are the applications of the 2SK3017. The 2SK3017 has four applications. The first is low drain−source on resistance. The second is high forward transfer admittance. The third is low leakage current. The fourth is enhancement mode. According to the above descriptions, you absolutely know that the 2SK3017 is useful.
The 2SK3017 has many absolute maximum ratings. Here show you six absolute maximum ratings of the 2SK3017. It can make you clear of the 2SK3017. The first absolute maximum rating is the gate-source voltage which is ±30 V, and its symbol is VGSS. The second absolute maximum rating is drain current, which is 8.5A, and its symbol is ID. The third absolute maximum rating is drain power dissipation, which is 90W, and its symbol is PD. The fourth absolute maximum rating is channel temperature, which is 150 °C, and its symbol is Tch. The fifth absolute maximum rating is storage temperature range, which range from −55 °C to 150 °C, and its symbol is Tstg. The last absolute maximum rating is drain-source voltage which is 900V, and the symbol is VDSS.
The following is the notes for the 2SK3017. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
You should also know that there are some restrictions on product use. Here show them to you. The first is that the information contained herein is subject to change without notice. The second is that TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.
Parameters: | Technical/Catalog Information | 2SK3017 |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 8.5A |
| Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | 2-16F1B |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2SK3017
2SK3017
|
2SK3017 Data Sheet
