2SK2992

The 2SK2992 is desiged as toshiba field effect transistor silicon N channel MOS type for high current switching applications and DC-DC converter, relay drive and motor drive applications.

2SK2992 has four features. (1)Low drain-source ON resistance which would be typ 2.2. (2)High forward transfer admittance which would be typ 0.9S. (3)Low leakage current which would be max 100uA at Vds=200V. (4)Enhancement mode which means Vth is 2.0V to 3.5V at Vds=10V and Id=1mA. Those are all the main features.

Some absolute maximum ratings of 2SK2992 have been concluded into several points as follow. (1)Its drain to source voltage would be 200V. (2)Its grain to gate voltage would be 200V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current would be 1A for DC and would be 3A for pulse. (5)Its drain power dissipation would be 0.5W. (6)Its single pulse avalanche energy would be 36mJ. (7)Its avalanche current would be 1A. (8)Repetitive avalanche energy would be 0.05mJ. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK2992 are concluded as follow. (1)Its gate leakage current would be max +/-10uA. (2)Its drain cutoff current would be max 100uA. (3)Its drain to source breakdown voltage would be min 200V at Vgs=0. (4)Its gate threshold voltage would be min 2.0V and max 3.5V. (5)Its forward transfer admittance would be min 0.5S and typ 0.9S.

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