MOSFET N-CH 500V 5A TO220FL
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Series: | - | Manufacturer: | Toshiba | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
Drain to Source Voltage (Vdss): | 500V | Continuous Drain Current : | 2.1 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 5A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 1mA | Gate Charge (Qg) @ Vgs: | 17nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 780pF @ 10V | ||
Power - Max: | 50W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3, Short Tab | Supplier Device Package: | TO-220FL |