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2SK2984

Features: · Low on-resistance RDS(on)1 = 10 mW (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mW (MAX.) (VGS = 4.5 V, ID = 20 A)· Low Ciss Ciss = 2850 pF TYP.· Built-in gate protection diodeSpecificationsDrain to Source Voltage Note1 VDSS. . . . . . . . . . . . . . . . . .. . . 30 VGate to Source Vo...

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SeekIC No. : 004226463 Detail

2SK2984: Features: · Low on-resistance RDS(on)1 = 10 mW (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mW (MAX.) (VGS = 4.5 V, ID = 20 A)· Low Ciss Ciss = 2850 pF TYP.· Built-in gate protection diodeSpecificat...

2SK2984 Data Sheet

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Part Number:
2SK2984
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

· Low on-resistance
   RDS(on)1 = 10 mW (MAX.) (VGS = 10 V, ID = 20 A)
   RDS(on)2 = 15 mW (MAX.) (VGS = 4.5 V, ID = 20 A)
· Low Ciss Ciss = 2850 pF TYP.
· Built-in gate protection diode


Specifications

Drain to Source Voltage Note1 VDSS  . . . . . . . . . . . . . . . . . . . . .  30 V
Gate to Source Voltage Note2 VGSS  . . . . . . . . . . . . . . . . . . . . .±20 V
Drain Current (DC) ID(DC)  . . . . . . . . . . . . . . . . . . . . . . . . . . ..±40 A
Drain Current (pulse)Note3 ID(pulse)  . . . . . . . . . . . . . . . . . .±160 A
Total Power Dissipation (TA = 25°C) PT  . . . . . . . . . . . . . . . . . 1.5 W
Total Power Dissipation (Tc = 25°C) PT  . . . . . . . . . . . . . . . . . .60 W
Channel Temperature Tch  . . . . . . . . . . . . . . . . . . . . . . . . . . .150 °C
Storage Temperature Tstg . . . . . . . . . . . . . . . . . . . . .-55 to +150 °C
Notes.1 VGS = 0 V
          2 VDS = 0 V
          3 PW 10 m s, Duty Cycle 1 %


Description

2SK2984 is N-Channel MOS Field Effect Transistor designed for high current switching application.


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