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2SK2983

Features: · Low on-resistance RDS(on)1 = 20 mW (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mW (MAX.) (VGS = 4.5 V, ID = 15 A)· Low Ciss Ciss = 1200 pF TYP.· Built-in gate protection diodeSpecifications Item Symbol Rating Unit Drain to Source VoltageNote1Gate to Source Voltage...

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SeekIC No. : 004226462 Detail

2SK2983: Features: · Low on-resistance RDS(on)1 = 20 mW (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mW (MAX.) (VGS = 4.5 V, ID = 15 A)· Low Ciss Ciss = 1200 pF TYP.· Built-in gate protection diodeSpecificat...

2SK2983 Data Sheet

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Part Number:
2SK2983
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Low on-resistance
    RDS(on)1 = 20 mW (MAX.) (VGS = 10 V, ID = 15 A)
    RDS(on)2 = 27 mW (MAX.) (VGS = 4.5 V, ID = 15 A)
· Low Ciss Ciss = 1200 pF TYP.
· Built-in gate protection diode


Specifications

Item
Symbol
Rating
Unit
Drain to Source VoltageNote1
Gate to Source VoltageNote2
Drain Current (DC)
Drain Current (pulse)Note3
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
30
±20
±30
±120
1.5
50
150
-55 to +150
V
V
A
A
W
W
°C
°C

Notes
1. VGS = 0 V
2. VDS = 0 V
3. PW £ 10 m s, Duty Cycle  1 %



Description

2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application.


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