2SK2983 Selling Leads, Price trend, 2SK2983 DataSheet download, circuit diagram from SeekIC.com

Features: · Low on-resistance RDS(on)1 = 20 mW (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mW (MAX.) (VGS = 4.5 V, ID = 15 A)· Low Ciss Ciss = 1200 pF TYP.· Built-in gate protection diodeSpecifications Item Symbol Rating Unit Drain to Source VoltageNote1Gate to Source Voltage...

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SeekIC No. : 004226462 Detail

2SK2983: Features: · Low on-resistance RDS(on)1 = 20 mW (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mW (MAX.) (VGS = 4.5 V, ID = 15 A)· Low Ciss Ciss = 1200 pF TYP.· Built-in gate protection diodeSpecificat...

2SK2983 Data Sheet

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Part Number:: 2SK2983
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/5/28

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Description

Features:

· Low on-resistance
RDS(on)1 = 20 mW (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 27 mW (MAX.) (VGS = 4.5 V, ID = 15 A)
· Low Ciss Ciss = 1200 pF TYP.
· Built-in gate protection diode

Specifications

Item	Symbol	Rating	Unit
Drain to Source VoltageNote1 Gate to Source VoltageNote2 Drain Current (DC) Drain Current (pulse)Note3 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature	VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg	30 ±20 ±30 ±120 1.5 50 150 -55 to +150	V V A A W W °C °C

Notes
1. VGS = 0 V
2. VDS = 0 V
3. PW £ 10 m s, Duty Cycle 1 %

Description

2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application.

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2SK2983

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