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2SK2982

Features: ` Low On-Resistance R DS(on)1 = 12.5 m (MAX.) (VGS = 10 V, ID = 15 A) R DS(on)2 = 16.5 m (MAX.) (VGS = 4.5 V, ID = 15 A) R DS(on)3 = 19.0 m (MAX.) (VGS = 4.0 V, ID = 15 A)` Low Ciss : Ciss = 2290 pF (TYP.)` Built-in Gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0) VDS...

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SeekIC No. : 004226461 Detail

2SK2982: Features: ` Low On-Resistance R DS(on)1 = 12.5 m (MAX.) (VGS = 10 V, ID = 15 A) R DS(on)2 = 16.5 m (MAX.) (VGS = 4.5 V, ID = 15 A) R DS(on)3 = 19.0 m (MAX.) (VGS = 4.0 V, ID = 15 A)` Low Ciss : Ciss...

2SK2982 Data Sheet

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Part Number:
2SK2982
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low On-Resistance
   R DS(on)1 = 12.5 m (MAX.) (VGS = 10 V, ID = 15 A)
   R DS(on)2 = 16.5 m (MAX.) (VGS = 4.5 V, ID = 15 A)
   R DS(on)3 = 19.0 m (MAX.) (VGS = 4.0 V, ID = 15 A)
` Low Ciss : Ciss = 2290 pF (TYP.)
` Built-in Gate protection diode


Specifications

Drain to Source Voltage (VGS = 0) VDSS ......................30 V
Gate to Source Voltage (VDS = 0) VGSS  .....................±20 V
Drain Current (DC) I D(DC) ............................±30 A
Drain Current (Pulse) Note I D(pulse) ......................±120 A
Total Power Dissipation (TA = 25°C) PT  .....................1.0 W
Total Power Dissipation (TCH = 25°C) PT  .................... 30 W
Channel Temperature Tch   ...........................150 °C
Storage Temperature Tstg ...................... 55 to + 150 °C
Note:PW 10 s, Duty Cycle 1 %
Remark: The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional
protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.




Description

2SK2982 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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