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2SK2981

Features: ` Low on-resistance R DS(on)1 = 27 m (MAX.) (VGS = 10 V, ID = 10 A) R DS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 10 A) R DS(on)3 = 50 m (MAX.) (VGS = 4 V, ID = 10 A)` Low Ciss : Ciss = 860 pF (TYP.)` Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0) VDSS ..........

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SeekIC No. : 004226460 Detail

2SK2981: Features: ` Low on-resistance R DS(on)1 = 27 m (MAX.) (VGS = 10 V, ID = 10 A) R DS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 10 A) R DS(on)3 = 50 m (MAX.) (VGS = 4 V, ID = 10 A)` Low Ciss : Ciss = 860 p...

2SK2981 Data Sheet

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Part Number:
2SK2981
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low on-resistance
    R DS(on)1 = 27 m (MAX.) (VGS = 10 V, ID = 10 A)
    R DS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 10 A)
    R DS(on)3 = 50 m (MAX.) (VGS = 4 V, ID = 10 A)
` Low Ciss : Ciss = 860 pF (TYP.)
` Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0) VDSS ......................30 V
Gate to Source Voltage (VDS = 0) VGSS ..................... ±20 V
Drain Current (DC) I D(DC)............................±20 A
Drain Current (Pulse) Note I D(pulse) ...................... ±80 A
Total Power Dissipation (Tc = 25 °C) PT..................... 20 W
Channel Temperature Tch  ...........................150 °C
Storage Temperature Tstg ......................55 to + 150 °C
Note:PW 10 s, Duty Cycle 1 %
Remark :The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.




Description

2SK2981 is N-Channel MOS Field Effect Transistor designed for high current switching applications


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