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2SK2975

Features: • High power gain:Gpe³8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm• High efficiency:55% typ.• Source case type seramic package (connected internally to source)ApplicationFor drive stage and output stage of power amplifiers in VHF/UHF band portable radio setsSpecifications ...

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SeekIC No. : 004226455 Detail

2SK2975: Features: • High power gain:Gpe³8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm• High efficiency:55% typ.• Source case type seramic package (connected internally to source)ApplicationFor d...

2SK2975 Data Sheet

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Part Number:
2SK2975
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High power gain:Gpe³8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package (connected internally to source)


Application

For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets


Specifications

Symbol

Parameter

Conditions

Ratings

Unit

VDSS

Drain to source voltage

 

30

V

VGSS

Gate to source voltage

 

±20

V

Pch

Channel dissipation

Tc=25°C     (Note2)

10

W

Tj

Junction temperature

 

175

°C

Tstg

Storage temperature

 

-40 to +110

°C




Description

2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.


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