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2SK2968(F,T)

MOSFET N-Ch 900V 10A Rdson 1.25 Ohm

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SeekIC No. : 00154649 Detail

2SK2968(F,T): MOSFET N-Ch 900V 10A Rdson 1.25 Ohm

2SK2968(F,T) Data Sheet

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Part Number:
2SK2968(F,T)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 10 A Resistance Drain-Source RDS (on) : 1.25 Ohms
Configuration : Single Mounting Style : Through Hole
Package / Case : TO-3PN    

Description

Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 1.25 Ohms
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-3PN


Parameters:

Technical/Catalog Information2SK2968(F,T)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1.25 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / Case2-16C1B (TO-247 N)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2968 F,T
2SK2968F,T
2SK2968FT ND
2SK2968FTND
2SK2968FT



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