MOSFET N-Ch 900V 10A Rdson 1.25 Ohm
2SK2968(F,T): MOSFET N-Ch 900V 10A Rdson 1.25 Ohm
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V |
Continuous Drain Current : | 10 A | Resistance Drain-Source RDS (on) : | 1.25 Ohms |
Configuration : | Single | Mounting Style : | Through Hole |
Package / Case : | TO-3PN |
Technical/Catalog Information | 2SK2968(F,T) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 4A, 10V |
Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 70nC @ 10V |
Package / Case | 2-16C1B (TO-247 N) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SK2968 F,T 2SK2968F,T 2SK2968FT ND 2SK2968FTND 2SK2968FT |