2SK2967

MOSFET N-CH 250V 30A TO-3PN

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2SK2967 Picture
SeekIC No. : 003434080 Detail

2SK2967: MOSFET N-CH 250V 30A TO-3PN

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Part Number:
2SK2967
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 250V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) @ Vgs: 132nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5400pF @ 10V
Power - Max: 150W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 150W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Gate Charge (Qg) @ Vgs: 132nC @ 10V
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Input Capacitance (Ciss) @ Vds: 5400pF @ 10V
Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V


Features:






Specifications






Description

      The 2SK2967 has a DC−DC converter, and it relay drive and motor drive. The followings are the applications of the 2SK2967. The 2SK2967 has four applications. The first is low drain−source on resistance. The second is high forward transfer admittance. The third is low leakage current. The fourth is enhancement mode. According to the above descriptions, you absolutely know that the 2SK2967 is useful.
      The 2SK2967 has many absolute maximum ratings. Here show you six absolute maximum ratings of the 2SK2967. It can make you clear of the 2SK2967. The first absolute maximum rating is the gate-source voltage which is ±20 V, and its symbol is VGSS. The second absolute maximum rating is drain current, which is 30A, and its symbol is ID. The third absolute maximum rating is drain power dissipation, which is 150W, and its symbol is PD. The fourth absolute maximum rating is channel temperature, which is 150 °C, and its symbol is Tch. The fifth absolute maximum rating is storage temperature range, which range from −55 °C to 150 °C, and its symbol is Tstg. The last absolute maximum rating is drain-source voltage which is 250V, and the symbol is VDSS.
      The following is the notes for the 2SK2967. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
      You should also know that there are some restrictions on product use. Here show them to you. The first is that the information contained herein is subject to change without notice. The second is that TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.






Parameters:

Technical/Catalog Information2SK2967
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs68 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 10V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs132nC @ 10V
Package / Case2-16C1B (TO-247 N)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2SK2967
2SK2967



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