2SK2962

DescriptionThe 2SK2962 is desiged as toshiba field effect transistor silicon N channel MOS type for high speed, high current switching applications and chopper regulator, DC-DC converter ad motor drive applications.2SK2962 has five features. (1)4V gate drive. (2)Low drain-source ON resistance whic...

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SeekIC No. : 004226447 Detail

2SK2962: DescriptionThe 2SK2962 is desiged as toshiba field effect transistor silicon N channel MOS type for high speed, high current switching applications and chopper regulator, DC-DC converter ad motor dr...

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Part Number:
2SK2962
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Description

The 2SK2962 is desiged as toshiba field effect transistor silicon N channel MOS type for high speed, high current switching applications and chopper regulator, DC-DC converter ad motor drive applications.

2SK2962 has five features. (1)4V gate drive. (2)Low drain-source ON resistance which would be typ 0.5. (3)High forward transfer admittance which would be typ 1.2S. (4)Low leakage current which would be max 100uA at Vds=100V. (5)Enhancement mode which means Vth is 0.8V to 2.0V at Vds=10V and Id=1mA. Those are all the main features.

Some absolute maximum ratings of 2SK2962 have been concluded into several points as follow. (1)Its drain to source voltage would be 100V. (2)Its grain to gate voltage would be 100V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current would be 1A for DC and would be 3A for pulse. (5)Its drain power dissipation would be 0.9W. (6)Its single pulse avalanche energy would be 137mJ. (7)Its avalanche current would be 1A. (8)Repetitive avalanche energy would be 0.09mJ. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK2962 are concluded as follow. (1)Its gate leakage current would be max +/-10uA. (2)Its drain cutoff current would be max 100uA. (3)Its drain to source breakdown voltage would be min 100V at Vgs=0. (4)Its gate threshold voltage would be min 0.8V and max 2.0V. (5)Its forward transfer admittance would be min 0.6S and typ 1.2S.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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