Features: ` Low on-resistance RDS(on) = 7m typ.` 4V gate drive devices.` High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 50 A Drain peak current ID(pulse)*1 200 A Bod...
2SK2957(L): Features: ` Low on-resistance RDS(on) = 7m typ.` 4V gate drive devices.` High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 30 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 50 | A |
Drain peak current | ID(pulse)*1 | 200 | A |
Body to drain diode reverse drain current | IDR | 50 | A |
Channel dissipation | Pch*2 | 75 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |