Features: ` Low on-resistance RDS =0.010 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 45 A Drain peak current ...
2SK2955: Features: ` Low on-resistance RDS =0.010 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 45 | A |
Drain peak current | ID(pulse)Note1 | 180 | A |
Body to drain diode reverse drain current | IDR | 45 | A |
Avalanche current | IAPNote3 | 45 | A |
Avalanche energy | EARNote3 | 173 | mJ |
Channel dissipation | PchNote2 | 100 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |