2SK2952

The 2SK2952 is desiged as toshiba field effect transistor silicon N channel MOS type for high speed, high current switching applications and chopper regulator, DC-DC converter ad motor drive applications.

2SK2952 has four features. (1)Low drain-source ON resistance which would be typ 0.4. (2)High forward transfer admittance which would be typ 8.0S. (3)Low leakage current which would be max 100uA at Vds=400V. (4)Enhancement mode which means Vth is 2.0V to 4.0V at Vds=10V and Id=1mA. Those are all the main features.

Some absolute maximum ratings of 2SK2952 have been concluded into several points as follow. (1)Its drain to source voltage would be 400V. (2)Its grain to gate voltage would be 400V. (3)Its gate to source voltage would be +/-30V. (4)Its drain current would be 8.5A for DC and would be 34A for pulse. (5)Its drain power dissipation would be 40W. (6)Its single pulse avalanche energy would be 427mJ. (7)Its avalanche current would be 8.5A. (8)Repetitive avalanche energy would be 4mJ. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK2952 are concluded as follow. (1)Its gate leakage current would be max +/-10uA. (2)Its drain cutoff current would be max 100uA. (3)Its drain to source breakdown voltage would be min 400V at Vgs=0. (4)Its gate threshold voltage would be min 2V and max 4V. (5)Its forward transfer admittance would be min 4S and typ 8S.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!