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2SK2941

Features: • Low On-Resistance R DS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A) R DS(on)2 = 22 m Typ. (VGS = 4 V, ID = 18 A)• Low Ciss Ciss = 1250 pF Typ.• Built-in G-S Protection DiodeSpecificationsMaximum Voltages and CurrentsDrain to Source Voltage VDSS ...............................

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SeekIC No. : 004226434 Detail

2SK2941: Features: • Low On-Resistance R DS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A) R DS(on)2 = 22 m Typ. (VGS = 4 V, ID = 18 A)• Low Ciss Ciss = 1250 pF Typ.• Built-in G-S Protection Diode...

2SK2941 Data Sheet

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Part Number:
2SK2941
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
   R DS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A)
   R DS(on)2 = 22 m Typ. (VGS = 4 V, ID = 18 A)
• Low Ciss    Ciss = 1250 pF Typ.
• Built-in G-S Protection Diode


Specifications

Maximum Voltages and Currents
Drain to Source Voltage VDSS ..............................30 V
Gate to Source Voltage VGSS  .............................±20 V
Drain Current (DC) I D(DC)   ..............................±35 A
Drain Current (Pulse)* I D(Pulse) ...........................±140 A
Maximum Power Dissipation
Total Power Dissipation (TA = 25 °C) PT   .......................1.5 W
Total Power Dissipation (TC = 25 °C) PT ........................60 W
Maximum Temperature
Channel Temperature Tch   ..............................150 °C
Storage Temperature Tstg  .........................55 to + 125 °C

* PW 10 s, Duty Cycle 1 %


Description

2SK2941 is n-Chanel MOS Field Effect Transistor designed high current switching application.


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