Features: ` Low on-resistance RDS =0.020 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 35 ...
2SK2939: Features: ` Low on-resistance RDS =0.020 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Rating Unit Drain to source volta...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item |
Symbol |
Rating |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
35 |
A |
Drain peak current |
ID(pulse)1 |
140 |
A |
Body-drain diode reverse drain current |
IDR |
35 |
A |
Avalanche current |
IAP3 |
35 |
A |
Avalanche energy |
EAR3 |
105 |
mJ |
Channel dissipation |
Pch2 |
50 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |