Features: · Low on-resistance RDS =0.026 W typ.· High speed switching· 4V gate drive device can be driven from 5V sourceSpecifications Parameter Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 25 A Drain peak cur...
2SK2938(L): Features: · Low on-resistance RDS =0.026 W typ.· High speed switching· 4V gate drive device can be driven from 5V sourceSpecifications Parameter Symbol Ratings Unit Drain to source voltag...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
· Low on-resistance RDS =0.026 W typ.
· High speed switching
· 4V gate drive device can be driven from 5V source
Parameter | Symbol | Ratings | Unit |
---|---|---|---|
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 25 | A |
Drain peak current | ID(pulse)Note1 | 100 | A |
Body-drain diode reverse drain current | IDR | 25 | A |
Avalanche current | IAPNote3 | 20 | A |
Avalanche energy | EARNote3 | 34 | mJ |
Channel dissipation | Pch Note2 | 50 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |