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2SK2925(S)

Features: ` Low on-resistance RDS = 0.060 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 10 A Drain peak current ...

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2SK2925(S): Features: ` Low on-resistance RDS = 0.060 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VD...

2SK2925(S) Data Sheet

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Part Number:
2SK2925(S)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` Low on-resistance RDS = 0.060 typ.
` High speed switching
` 4V gate drive device can be driven from 5V source


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 10 A
Drain peak current ID(pulse)*1 40 A
Body to drain diode reverse drain current IDR 10 A
Avalanche current IAP*3 10 A
Avalanche energy EAR*3 8.5 mJ
Channel dissipation Pch*2 20 W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25
3. Value at Tch = 25, Rg 50



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