Features: `Low on-resistanceRDS =0.060 typ.`High speed switching`4V gate drive device can be driven from 5V sourceSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 10 A ...
2SK2925S: Features: `Low on-resistanceRDS =0.060 typ.`High speed switching`4V gate drive device can be driven from 5V sourceSpecifications Parameter Symbol Rating Unit Drain to source volt...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 10 | A |
Drain current | Idp * | 40 | A |
Power dissipation | PD | 20 |
W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |