2SK2918-01

DescriptionThe 2SK2918-01 is a power mosfet n-channel enhancement mode power mosfet for switching.Feature of the 2SK2918-01 is:for switching. The absolute maximum ratings of the 2SK2918-01 can be summarized as:(1)drain-source voltage:200V; (2)drain-gate voltage:200V; (3)continous drain current:±2...

product image

2SK2918-01 Picture
SeekIC No. : 004226403 Detail

2SK2918-01: DescriptionThe 2SK2918-01 is a power mosfet n-channel enhancement mode power mosfet for switching.Feature of the 2SK2918-01 is:for switching. The absolute maximum ratings of the 2SK2918-01 can be s...

floor Price/Ceiling Price

Part Number:
2SK2918-01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The 2SK2918-01 is a power mosfet n-channel enhancement mode power mosfet for switching.Feature of the 2SK2918-01 is:for switching.

The absolute maximum ratings of the 2SK2918-01 can be summarized as:(1)drain-source voltage:200V; (2)drain-gate voltage:200V; (3)continous drain current:±20A; (4)pulsed drain current:±80A; (5)gate-source voltage:±30V; (6)maximum power dissipation:80W; (7)operating and storage temperature range:150(Tch);-55~150(Tatg).

The electrical characteristics at TA=25°C of the 2SK2918-01 can be summarized as:(1)drain-source breakdown voltage:200V; (2)gate threshold voltage:2.5~3.5V; (3)zero gate voltage drain current:500A(Tch=25);1.0mA(Tch=125); (4)gate-source leakage current:100nA; (5)drain-source on-state resistance:130m.; (6)forward transconductance:7.0S; (7)input capacitance:2700pF; (8)output capacitance:480pF; (9)reverse transfer capacitance:120pF; (10)turn-on time:25ns(td(on));90ns(tr); (11)turn-off time:100ns(td(off));90ns(tr); (12)avalanche capability:20.0A; (13)diode forward on-voltage:1.59V; (14)reverse recovery time:145ns; (15)reverse recovery charge:900C.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Prototyping Products
DE1
Transformers
Optoelectronics
Tapes, Adhesives
803
Computers, Office - Components, Accessories
View more