DescriptionThe 2SK2918-01 is a power mosfet n-channel enhancement mode power mosfet for switching.Feature of the 2SK2918-01 is:for switching. The absolute maximum ratings of the 2SK2918-01 can be summarized as:(1)drain-source voltage:200V; (2)drain-gate voltage:200V; (3)continous drain current:±2...
2SK2918-01: DescriptionThe 2SK2918-01 is a power mosfet n-channel enhancement mode power mosfet for switching.Feature of the 2SK2918-01 is:for switching. The absolute maximum ratings of the 2SK2918-01 can be s...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
The 2SK2918-01 is a power mosfet n-channel enhancement mode power mosfet for switching.Feature of the 2SK2918-01 is:for switching.
The absolute maximum ratings of the 2SK2918-01 can be summarized as:(1)drain-source voltage:200V; (2)drain-gate voltage:200V; (3)continous drain current:±20A; (4)pulsed drain current:±80A; (5)gate-source voltage:±30V; (6)maximum power dissipation:80W; (7)operating and storage temperature range:150(Tch);-55~150(Tatg).
The electrical characteristics at TA=25°C of the 2SK2918-01 can be summarized as:(1)drain-source breakdown voltage:200V; (2)gate threshold voltage:2.5~3.5V; (3)zero gate voltage drain current:500A(Tch=25);1.0mA(Tch=125); (4)gate-source leakage current:100nA; (5)drain-source on-state resistance:130m.; (6)forward transconductance:7.0S; (7)input capacitance:2700pF; (8)output capacitance:480pF; (9)reverse transfer capacitance:120pF; (10)turn-on time:25ns(td(on));90ns(tr); (11)turn-off time:100ns(td(off));90ns(tr); (12)avalanche capability:20.0A; (13)diode forward on-voltage:1.59V; (14)reverse recovery time:145ns; (15)reverse recovery charge:900C.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .