Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 90W
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)IS
Input Capacitance (Ciss) @ Vds: 3720pF @ 10V
DescriptionThe 2SK2917 is desiged as toshiba field effect transistor silicon N channel MOS type for high speed, high current switching applications and chopper regulator, DC-DC converter ad motor drive applications.
2SK2917 has four features. (1)Low drain-source ON resistance which would be typ 0.5. (2)High forward transfer admittance which would be typ 1.2S. (3)Low leakage current which would be max 100uA at Vds=500V. (4)Enhancement mode which means Vth is 2.0V to 4.0V at Vds=10V and Id=1mA. Those are all the main features.
Some absolute maximum ratings of 2SK2917 have been concluded into several points as follow. (1)Its drain to source voltage would be 500V. (2)Its grain to gate voltage would be 500V. (3)Its gate to source voltage would be +/-30V. (4)Its drain current would be 18A for DC and would be 72A for pulse. (5)Its drain power dissipation would be 90W. (6)Its single pulse avalanche energy would be 915mJ. (7)Its avalanche current would be 18A. (8)Repetitive avalanche energy would be 9mJ. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics are concluded as follow. (1)Its gate leakage current would be max +/-10uA. (2)Its drain cutoff current would be max 100uA. (3)Its drain to source breakdown voltage would be min 500V at Vgs=0. (4)Its gate threshold voltage would be min 2V and max 4V. (5)Its forward transfer admittance would be min 10S and typ 17S.
It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information about 2SK2917, please contact us for details. Thank you!
Parameters: | Technical/Catalog Information | 2SK2917 |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3720pF @ 10V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | 2-16F1B |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2SK2917
2SK2917
|
2SK2917 Data Sheet
