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2SK2916(F)

MOSFET N-ch 500V 14A 0.4 ohm

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SeekIC No. : 00164134 Detail

2SK2916(F): MOSFET N-ch 500V 14A 0.4 ohm

2SK2916(F) Data Sheet

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Part Number:
2SK2916(F)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-3P(N)IS
Packaging : Bulk    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Packaging : Bulk
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-3P(N)IS


Parameters:

Technical/Catalog Information2SK2916(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs400 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 10V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs58nC @ 10V
Package / Case2-16F1B
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2916 F
2SK2916F



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