2SK2916

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 14A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 2600pF @ 10V
Power - Max: 80W
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V
Supplier Device Package: TO-3P(N)IS


Features:






Specifications






Description

      The 2SK2916 is designed as silicon N-channel MOS type (-MOSV) with typical applications of DC/DC converter, relay drive and motor Drive applications.
      2SK2916 has four features.The first one is that it would have low drain-source ON-resistance which means RDS (ON) = 0.35 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 11 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 500 V).The fourth one is that it would have enhancement mode which means Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings of 2SK2916 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 500 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 500 V.The third one is about its gate-source voltage which would be ±30 V.The fourth one is about its drain current which would be 14 A for DC and would be 56 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 80 W.The sixth one is about its single pulse avalanche energy which would be 795 mJ.The seventh one is about its avalanche current which would be 14 A.The eighth one is about its repetitive avalanche energy which would be 8 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SK2916 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And about its single-pulse avalanche energy it should be noted that Vdd = 90 V,starting Tch = 25°C, L = 6.9 mH, Rg = 25 , Iar = 14 A.About its repetitive avalanche energy it should be noted that repetitive rating: pulse width limited by maximum channel temperature.After all this transistor is an electrostatic-sensitive device.Please handle with caution.

Parameters:

Technical/Catalog Information	2SK2916
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	400 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 10V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	2-16F1B
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2916 2SK2916