Features: SpecificationsDescription The 2SK2909 is designed as N-channel silicon MOSFET with typical applications of ultrahigh-speed switching applications. 2SK2909 has three features.Thr first one is that it would have low ON-resistance.The second one is that it would have ultrahigh-speed switchi...
2SK2909: Features: SpecificationsDescription The 2SK2909 is designed as N-channel silicon MOSFET with typical applications of ultrahigh-speed switching applications. 2SK2909 has three features.Thr first one ...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
The 2SK2909 is designed as N-channel silicon MOSFET with typical applications of ultrahigh-speed switching applications.
2SK2909 has three features.Thr first one is that it would have low ON-resistance.The second one is that it would have ultrahigh-speed switching.The third one is that it would have 2.5V drive.That are all the features.
Some absolute maximum ratings of 2SK2909 at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 20 V.The second one is about its gate to source voltage which would be ±10 V.The third one is about its drain current (DC) which would be 0.8 A.The fourth one is about its drain current (pulse) which would be 3.2 A with condition of PW<=10ms, duty cycle<=1%.The fifth one is about its allowable power dissipation which would be 0.25 W.The sixth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
Also there are some important electrical characteristics at Ta = 25°C about 2SK2909.The first one is about its drain to source breakdown voltage which would be min 20V with condition of Id=1mA, Vgs=0.The second one is about its zero gate voltage drain current which would be max 10 A with condition of Vds=20V, Vgs=0.The third one is about its gate to source leakage current which would be max ±10 A with condition of Vgs=±8V, Vds=0.The fourth one is about its cutoff voltage which would be from 0.4 to 1.3V with condition of Vds=10V, Id=1mA.The fifth one is about its forward transfer admittance which would be min 1.4S and typ 2S with condition of Vds=10V, Id=400mA.The sixth one is about its static drain to source on-state resistance which would be typ 200m and max 300m with condition of Id=400mA, Vgs=4V and would be typ 300m adn max 480m with condition of Id=100mA, Vgs=2.5V.The seventh one is about its input capacitance which would be typ 90 pF with condition of Vds=10V, f=1MHz.The eighth one is about its output capacitance which would be typ 60 pF with condition of Vds=10V, f=1MHz.And so on.For more information please contact us.